| Autor: |
Anton J. Bauer, Tobias Erlbacher, Seongjun Kim, Jonas Buettner, Nam-Suk Lee, Min Who Lim, Sang Mo Koo, Hoon Kyu Shin, Hong-Ki Kim |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. 963:429-432 |
| ISSN: |
1662-9752 |
| Popis: |
In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS analysis, work function and Si-C binding energy of implanted samples were increased compared to the reference 4H-SiC sample. Those variations may be caused by lattice disorder and amorphization. In addition, TEM image showed damaged area in 4H-SiC epitaxial layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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