Double electron layer tunnelling transistor (DELTT)
| Autor: | Jerry A. Simmons, M. A. Blount, M.J. Hafich, W. E. Baca, John L. Reno, J S Moon |
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| Rok vydání: | 1998 |
| Předmět: |
Bistability
business.industry Chemistry Transistor Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Planar Electrical resistance and conductance law Materials Chemistry Optoelectronics Electrical and Electronic Engineering Resistor business Quantum tunnelling Voltage |
| Zdroj: | Semiconductor Science and Technology. 13:A180-A183 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/13/8a/051 |
| Popis: | We demonstrate the double electron layer tunnelling transistor (DELTT), based on the gate control of two-dimensional-two-dimensional tunnelling in a double quantum well. Unlike previously proposed resonant tunnelling transistors, the DELTT is entirely planar and can be easily fabricated in large numbers. At 1.5 K we demonstrate peak-to-background ratios of :1 in source-drain conductance versus gate voltage and peak-to-valley ratios of :1 in the source-drain current versus source-drain voltage. Using a single DELTT in series with a load resistor, we demonstrate low-power bistable memories at 1.5 K. We also demonstrate a unipolar complementary static RAM by connecting two DELTTs in series. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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