Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE

Autor:	Rensuo Liu, Luo Xiaoju, Lai Yun, Ding Wang, Qinhao Kong, Fei Hou, Jinfeng Tang, Xianying Wang, Troy Baker
Rok vydání:	2021
Předmět:	Diffraction Materials science Dopant business.industry Hydride Gallium nitride Condensed Matter Physics Epitaxy Methane Inorganic Chemistry chemistry.chemical_compound chemistry Electrical resistivity and conductivity Materials Chemistry Optoelectronics Wafer business
Zdroj:	Journal of Crystal Growth. 573:126216
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2021.126216
Popis:	Four-inch semi-insulating free-standing gallium nitride (GaN) wafers grown by hydride vapor phase epitaxy (HVPE) with carbon doping were obtained by a self-separated process. The as-grown wafer thickness can reach 900 µm without cracks. The dopant gas was methane (CH4) with concentration of 5% CH4 in N2. The FWHMs of (0 0 2) and (1 0 2) x-ray diffraction rocking curves were lower than 100 arcsec and typically were 40 – 60 arcsec. The resistivity was measured to be greater than 1010 Ω-cm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5a9c2e9fba98570f9193831ae1d733e6 https://doi.org/10.1016/j.jcrysgro.2021.126216 Zobrazit plný text záznamu Full Text from ScienceDirect