High rate PECVD of a-Si alloys on large areas
| Autor: | K. Schade, R. Tews, A. Kottwitz, S. Röhlecke |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Dissipation Condensed Matter Physics Surfaces Coatings and Films Volumetric flow rate Magnetic field chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Thin film Coaxial Deposition (chemistry) |
| Zdroj: | Surface and Coatings Technology. :259-263 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/0257-8972(95)08234-4 |
| Popis: | The deposition of a-Si alloys on large areas was investigated in the frequency region from 3 to 30 MHz. With increasing frequency an increasing deposition rate (5–30 μm h −1 ) and a decreasing powder formation result. An upscaling from small areas (100 cm 2 –1000 cm 2 ) to larger areas (2500 cm 2 for the parallel plate and 5000 cm 2 for the coaxial reactor) was realized. With a homogeneous r.f. voltage we obtained a homogeneous r.f. power dissipation and a homogeneous layer thickness (±5%). An additional stabilization for the discharge over the length was obtained by use of a permanent magnetic field. We have calculated the deposition rate as a function of r.f. power, pressure, gas flow rate, frequency, magnetic field, discharge length and gas temperature on the basis of a semiquantitative plasma chemistry model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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