Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP
| Autor: | B. Lepley, Joop Schoonman, A. Bath, J.G.M. Becht, P.J. Van der Put |
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| Rok vydání: | 1991 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 70:4366-4370 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.349118 |
| Popis: | Thin films of boron nitride have been deposited in a plasma‐enhanced chemical vapor deposition system, for use as a gate dielectric layer on InP. The InP substrates were pretreated by in situ HCl vapor etching prior to the film deposition. Borane‐dimethylamine and ammonia were used as sources for boron and nitrogen. The depositions were carried out at low temperatures (320 °C), the samples being not directly exposed to the plasma which minimizes radiation damage to the substrates. The deposited films were characterized by ellipsometry, x‐ray photoelectron spectroscopy, infrared and ultraviolet−visible spectroscopy. Metal‐insulator‐semiconductor structures were realized to evaluate the bulk dielectric and insulator−semiconductor interface properties. The growth rates are low (20 nm/h). X‐ray photoelectron spectroscopy and infrared measurements showed that the layers are essentially boron nitride, with some boron excess (typically N/B≂0.8). The dielectric films were found to have an optical index n≂1.7, an ... |
| Databáze: | OpenAIRE |
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