Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe Heterointerface
| Autor: | Maxwell B. Lassise, Zhao Yuan, Xin-Hao Zhao, Yong-Hang Zhang, Shi Liu, Calli M. Campbell |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Thermionic emission Heterojunction 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Solar cell Electrical and Electronic Engineering Atomic physics 0210 nano-technology Quantum tunnelling Recombination |
| Zdroj: | IEEE Journal of Photovoltaics. 7:913-918 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | The interface recombination velocity (IRV) at the interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mg x Cd ${}_{1\hbox{-}}$ x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced interface recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the recombination at the DH interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μ s achieved in the DHs. |
| Databáze: | OpenAIRE |
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