Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method
| Autor: | Ichiro Yonenaga, Takayuki Ohsawa, Yuki Tokumoto, Kaihei Inoue, Yoshio Hashimoto, Hideaki Ise, Yu Murao, Toshinori Taishi, Yutaka Ohno |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Infrared Annealing (metallurgy) Doping Analytical chemistry chemistry.chemical_element Infrared spectroscopy Germanium Condensed Matter Physics Oxygen Electronic Optical and Magnetic Materials law.invention chemistry Magazine law Limiting oxygen concentration Electrical and Electronic Engineering |
| Zdroj: | Physica B: Condensed Matter. 407:2932-2934 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2011.08.038 |
| Popis: | Local vibrations of oxygen in Ge crystals grown by the Czochralski method adopting liquid-B2O3 encapsulation and GeO2 powder doping were investigated by Fourier-transform infrared spectroscopy. Strong absorption peaks at 855 cm−1, originating in local vibration of interstitially dissolved oxygen Oi as Ge–Oi–Ge quasi-molecules, developed depending on the doped amount of GeO2. Similarly, an absorption peak related to the combined vibration of Ge–Oi–Ge was found at 1264 cm−1 and the conversion factor from the peak intensity to the oxygen concentration was evaluated to be 1.15×1019 cm−2. By prolonged annealing at 350 °C an absorption peak developed at 780 cm−1, indicating formation of oxygen-related thermal donors. From the variations of carrier density and oxygen concentration, one donor was found to possess about 15 Oi atoms. |
| Databáze: | OpenAIRE |
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