Full band Monte Carlo study of ballistic effects in nanometer‐scaled strained P channel Double Gate MOSFETs

Autor:	C. Chassat, Philippe Dollfus, Arnaud Bournel, S. Galdin-Retailleau, D.-P. Nguyen, K. Huet
Rok vydání:	2008
Předmět:	Physics Condensed Matter::Materials Science Electron mobility Valence (chemistry) Condensed matter physics Scattering Ballistic conduction Monte Carlo method MOSFET Density of states Condensed Matter Physics Anisotropy
Zdroj:	physica status solidi c. 5:43-46
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200776558
Popis:	Ballistic transport in a 20 nm long P type Double Gate (DG) MOSFET structure is studied using a Monte Carlo (MC) technique. Hole transport being dominated by the strong anisotropy of the valence dispersion relation, the full bandstructure obtained by a 30 band k ·p calculation is used. The valence bandstructure is shown to be highly anisotropic. The deformation induced by strain is different whether biaxial tensile or compressive strain is applied. This will have an influence on the final density of states (DOS) and scattering rates, closely related to carrier mobility. In the on-state of the transistor, we demonstrate the out-of-equilibrium nature of carrier transport in the entire channel. Microscopic quantities analysis with strain shows the influence of scattering, bandstructure change and ballistic effects on hole transport. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5a5e34a0fecd848f15eaa771f83ee493 https://doi.org/10.1002/pssc.200776558 Zobrazit plný text záznamu Plný text