Material and n–p junction characteristics of As- and Sb-implanted SiC
| Autor: | G.C.B. Braga, Jesse B. Tucker, Mulpuri V. Rao, O. W. Holland, Peter H. Chi, Jaime A. Freitas, Nicolas A. Papanicolaou |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Passivation Equivalent series resistance Annealing (metallurgy) Mechanical Engineering Analytical chemistry Schottky diode General Chemistry Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Reverse leakage current Ion implantation Materials Chemistry Electrical and Electronic Engineering Diode |
| Zdroj: | Diamond and Related Materials. 9:1887-1896 |
| ISSN: | 0925-9635 |
| Popis: | Single and multiple energy As and Sb implantations were performed into p-type 6H–SiC epitaxial layers at room temperature (RT) and 800°C. Secondary ion mass spectrometry measurements showed severe implant loss for annealing temperatures >1500°C. Rutherford backscattering spectroscopy/channeling (RBS/C) measurements indicated a high degree of residual lattice damage for RT implantations even after 1600°C annealing while less damage was detected in 800°C implanted samples. Electrical activations (ratios of sheet carrier concentrations to implant doses) of 11 and 20% were measured for 800°C As and Sb implantations annealed at 1500°C, respectively. The Schottky capacitance–voltage profiling measurements indicated substitutional concentrations in the low 1018 cm−3 range for both As and Sb. Based on the experimental data, carrier ionization energies of 130 and 88 meV were estimated for As and Sb donors, respectively. Vertical n–p junction diodes were made by using multiple energy As and Sb implanted epitaxial layers. Elevated temperature As implanted diodes exhibited a room temperature reverse leakage current of ≈8×10−8 A/cm2 with no passivation at −100 V bias and a forward series resistance of 460 Ω. |
| Databáze: | OpenAIRE |
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