Mechanisms of Cu Electroless Plating onto Si(100) in Diluted HF Acid Solutions Containing CuSO4 or CuCl2

Autor:	Alexandre Hashimoto, Sebastiao G. Dos Santos, Claus Martin Hasenack
Rok vydání:	2008
Předmět:	chemistry.chemical_compound Hydrofluoric acid Materials science chemistry Etching (microfabrication) Plating Inorganic chemistry Fluorine chemistry.chemical_element Silicon oxide Oxygen Dissolution Ion
Zdroj:	ECS Transactions. 11:13-22
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2910227
Popis:	Presented in this work are the mechanisms of Cu plating onto (100) Si surfaces in diluted hydrofluoric acid (D-HF) solutions containing CuSO4 or CuCl2. For D-HF/CuSO4 baths, it was observed that: (a) Si dissolution occurs; (b) For each atom of Cu which plates, one atom of Si is consumed; (c) Si oxidation occurs at the Cu/Si interface; (d) Bubbles of an inflammable gas were uniformly distributed over the Cu films. Also, for D-HF/CuCl2 baths, it was observed that: (e) Si dissolution occurs; (f) for each two atoms of Cu which plate, one atom of Si is consumed; (g) Oxygen was detected across the Cu films; (h) No bubble of gas appeared. Based on these observations, Si oxidation followed by silicon oxide etching was inferred to occur during Cu plating in D-HF/CuSO4 baths and Si dissolution induced by fluorine ions was inferred to occur during Cu plating in D-HF/CuCl2 baths.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5a522622a7f0db553d67a2df87ed1ba9 https://doi.org/10.1149/1.2910227 Zobrazit plný text záznamu