Theoretical And Experimental Development Of Advanced Dopant-Sensitive Systems

Autor:	Luchuan Zhang, Y. Yang, Yuda Ye, Ping Linda Zhang
Rok vydání:	2011
Předmět:	Materials science Dopant Engineering physics
Zdroj:	ECS Transactions. 34:365-370
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3567605
Popis:	X-ray diffraction of antimony doped single crystal (100) surface with the concentration of 1.4~4.7x1018/cm3 is reported. The lattice constant is the same as Si. The anisotropic etching changed the very top fourfold rotational symmetrical (100) surfaces into the six-fold rotational symmetrical (111) surfaces. The etch rate is 100 times faster for our Sb doped (100) substrate vs. the pure silicon (100), using 20wt% KOH at 80~100ºC. The advanced wet etch develops facets that correspond to crystallographic planes and the advanced dopant-sensitive etching system which was measured.
Databáze:	OpenAIRE
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