Nanocrystalline diamond deposition in electron-temperature-controlled CH4/H2/Ar plasma
| Autor: | Reijiro Ikada, Satoru Iizuka, Kohgi Kato, Toshimi Abe |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Metals and Alloys
Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention symbols.namesake chemistry law Materials Chemistry symbols Electron temperature Graphite Inductively coupled plasma Crystallization Raman spectroscopy Carbon Deposition (law) |
| Zdroj: | Thin Solid Films. :73-76 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2005.08.085 |
| Popis: | Nanocrystalline diamond deposition is investigated under a control of electron temperature in CH4/H2/Ar plasma produced by inductively coupled rf discharge. A grid-biasing method is employed for the control of electron temperature Te. When Te in the processing region is ∼ 2 eV, simple graphite has been deposited. On the other hand, nanocrystalline diamond has been prepared in case of low electron temperature (∼ 0.3–0.5 eV) plasma when CH4 mixing ratio is very low (∼ 0.02). With increasing CH4 mixing ratio, the film property is changed from nanocrystalline diamond to diamond-like carbon. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect