Defect structure of 4H silicon carbide ingots

Autor:	A. V. Bulatov, D. D. Avrov, A. Yu. Fadeev, Yu. M. Tairov, A.O. Lebedev, S.I. Dorozhkin
Rok vydání:	2011
Předmět:	Materials science Condensed matter physics Condensed Matter Physics Curvature Inorganic Chemistry chemistry.chemical_compound Crystallography chemistry Physical vapor deposition Materials Chemistry Threading (manufacturing) Silicon carbide Allotropy Growth rate Inclusion (mineral) Ternary operation
Zdroj:	Journal of Crystal Growth. 318:394-396
ISSN:	0022-0248
Popis:	Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been analyzed. Antiphase domains of the 4H polytype emerging at the top and lateral sides of 15R inclusion form a strictly determined set of binary and ternary joints (extended threading defects). Junctions of a higher order could generate open-core threading superdefects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5a3c6ca6f7a8e2419ca0c4d39443dc92 https://doi.org/10.1016/j.jcrysgro.2010.10.166 Zobrazit plný text záznamu Full Text from ScienceDirect