Growth and characterization of large, high quality MoSe2 single crystals
| Autor: | Tiriana Segato, Boubié Guel, François Reniers, Abdelkrim Batan, Thomas Doneux, Moussa Bougouma, Jean B. Legma, Claudine Buess-Herman, Marie-Paule Delplancke-Ogletree |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Scanning electron microscope Analytical chemistry Condensed Matter Physics Microanalysis law.invention Inorganic Chemistry X-ray photoelectron spectroscopy Optical microscope Electrical resistivity and conductivity law Materials Chemistry Crystallite Inductively coupled plasma Stoichiometry |
| Zdroj: | Journal of Crystal Growth. 363:122-127 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2012.10.026 |
| Popis: | MoSe 2 single crystals were grown by chemical vapor transport using TeCl 4 as transport agents in the temperature gradient 1020–980 °C. They were characterized by scanning electron microscopy (SEM), optical microscopy, image analysis coupled with SEM, microanalysis by SEM-EDX, X-ray fluorescence, inductively coupled plasma (ICP), X-ray photoelectron spectroscopy (XPS) and electrical conductivity. The characterizations showed that single crystals are perfectly homogeneous, stoichiometric and have very few defects and clean surfaces with areas in the range of 35–100 mm 2 . Single crystals grown by TeCl 4 showed a high electrical conductivity. Their properties were highly dependent on the quality of the polycrystalline powders used for the growth. |
| Databáze: | OpenAIRE |
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