Temperature dependence of the EUV responsivity of silicon photodiode detectors
| Autor: | R. Korde, John F. Seely, Benjawan Kjornrattanawanich, C.N. Boyer, G. E. Holland |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silicon business.industry Extreme ultraviolet lithography Photodetector chemistry.chemical_element Semiconductor device Electronic Optical and Magnetic Materials law.invention Photodiode Responsivity Optics chemistry law Extreme ultraviolet Optoelectronics Electrical and Electronic Engineering Photolithography business |
| Zdroj: | IEEE Transactions on Electron Devices. 53:218-223 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2005.862500 |
| Popis: | Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having a thin metal silicide surface layer. Depending on the wavelength, the responsivity increases with temperature with the rates 0.013%/C to 0.053%/C for the AXUV photodiode and 0.020%/C to 0.084%/C for the SXUV photodiode. The increase in responsivity is consistent with the decrease in the silicon bandgap energy which causes a decrease in the pair creation energy. These results are particularly important for dose measurement in extreme ultraviolet (EUV) lithography steppers and sources since the detector temperature often increases because of the high EUV intensities involved. |
| Databáze: | OpenAIRE |
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