Boundary conditions for the formation of a ferromagnetic phase during the deposition of Ti1-x Co x O2-δ thin films
| Autor: | E. A. Gan’shina, L. A. Balagurov, A. F. Orlov, D. G. Yarkin, S. P. Kobeleva, N. S. Perov, S. O. Klimonskii |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Inorganic chemistry Oxide Analytical chemistry chemistry.chemical_element General Chemistry Magnetic semiconductor Atmospheric temperature range Condensed Matter Physics chemistry.chemical_compound chemistry Ferromagnetism Phase (matter) General Materials Science Charge carrier Thin film Cobalt |
| Zdroj: | Crystallography Reports. 50:686-689 |
| ISSN: | 1562-689X 1063-7745 |
| DOI: | 10.1134/1.1996746 |
| Popis: | The conditions and the mechanism of the formation of a ferromagnetic phase in a Ti1-x Co x O2-δ oxide semiconductor are studied. It is found that the ferromagnetism manifests itself at room temperature in the films of Co-doped TiO2-δ oxide deposited on SrTiO3 (100) substrates only within a limited range of charge carrier densities: 2 × 1018−3 × 1022 cm−3. The minimum concentration of charge carriers corresponding to the formation of the ferromagnetic phase increases with a decrease in the cobalt content in the material under study. The ferromagnetism in Ti1-x Co x O2-δ thin films can be attributed to Co-enriched clusters with above critical sizes. |
| Databáze: | OpenAIRE |
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