A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd
| Autor: | Xiaorong Duan, Fuchen Mu, Changhua Tan, Mingzhen Xu |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Electrical engineering Condensed Matter Physics Fluence Power law Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality business Drain current Gate current Hot carrier degradation Voltage |
| Zdroj: | Microelectronics Reliability. 41:1909-1913 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(01)00118-4 |
| Popis: | Hot-carrier degradation of n-MOSFETs at high gate voltages ( V g = V d ) is examined. A new lifetime prediction method is developed based on the universal power law between the degradation of saturated drain current (d I dsat ) and the product of the injected charge fluence times the gate current, which is independent of gate or drain voltages. This method is applied to 4 and 5 nm n-MOSFETs and lifetimes are estimated under their operation conditions. It is applicable to n-MOSFETs with ultrathin gate oxides. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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