Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
| Autor: | Ai Osawa, Tomoaki Hatayama, Natsuko Kanafuji, Takashi Fuyuki, Hiroshi Yano |
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| Rok vydání: | 2015 |
| Předmět: |
Negative-bias temperature instability
Materials science business.industry Annealing (metallurgy) Reverse short-channel effect Analytical chemistry Oxide Drain-induced barrier lowering Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound chemistry MOSFET Optoelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 62:324-332 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Threshold voltage instability was investigated for 4H-SiC MOSFETs with phosphorus-doped (POCl3-annealed) and nitrided (NO-annealed) gate oxides. Threshold voltage shift observed in the bidirectional drain current–gate voltage characteristics was evaluated using various gate voltage sweeps at room and elevated temperatures up to 200 °C. The threshold voltage shift was also studied after applying positive and negative bias-temperature stress. Two types of MOSFETs showed different instability characteristics, depending on gate biases and temperatures. These features were found to originate from the difference in trap density and trap location at/near the oxide/SiC interface and in the oxide. It is apparent that the oxide traps in phosphorus-doped oxides and near-interface traps in nitrided oxides are the main origin of the threshold voltage instability via capture and emission (in the case of oxide traps, only capture) of both electrons and holes. |
| Databáze: | OpenAIRE |
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