Structure and principal electrophysical properties of Ge1 − x -Si x thin films
| Autor: | U. F. Faradzhova, G. T. Agaverdiieva, A. S. Baitsar, Sh. M. Abbasov, G. M. Mekhdevi |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces Thermal treatment Conductivity Acceleration voltage Industrial and Manufacturing Engineering Surfaces Coatings and Films law.invention Electrical resistivity and conductivity law Irradiation Composite material Crystallization Thin film Solid solution |
| Zdroj: | Surface Engineering and Applied Electrochemistry. 45:161-166 |
| ISSN: | 1934-8002 1068-3755 |
| DOI: | 10.3103/s106837550902015x |
| Popis: | In the process of thermal treatment of deposited Ge0.85Si0.15 films, a number of peculiarities were found related to the character of their conductivity. The films of Ge0.85Si0.15 solid solutions are rather resistant to thermal quenching. It was shown experimentally that irradiation with electrons under an accelerating voltage enhances the crystallization in the films and lowers their electric conductivity. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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