Stress Effect on Aluminum-Induced Crystallization of Sputtered Amorphous Silicon Thin Films
| Autor: | Ching-Ming Hsu, Ming-Chang Yu, Ian-Fu Chen |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Metallurgy General Engineering General Physics and Astronomy chemistry.chemical_element Activation energy law.invention chemistry.chemical_compound chemistry Aluminium law Sputtering Thin film Crystallization Composite material |
| Zdroj: | Japanese Journal of Applied Physics. 42:4928-4934 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.42.4928 |
| Popis: | This study emphasizes the important role of film stress in aluminum-induced crystallization (AIC) of sputtered amorphous silicon (a-Si). a-Si/Al/glass stacking structures with various a-Si/Al thickness ratios were prepared to provide different film stresses for systematical study of the film stress effect. Results showed that the existence of film stress tended to deteriorate the crystallization tendency of the AIC of a-Si. To further investigate the importance of the film stress effect, an a-Si(2000 A)/Al(500 A)/glass sample with a low film stress of 0.53 Mpa was prepared and annealed. It was found that the release of film stress in consuming thermal energy during the thermal annealing process occurred before the metal enhancement effect came to effect. From discussions, it was also suggested that the low film stress, large concentration gradient and low activation energy of metal silicide formation would provide greater enhancement for metal-induced crystallization. |
| Databáze: | OpenAIRE |
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