Novel bi-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Autor:	Cheng-Jye Liu, C.C.-H. Hsu, Ming-Chi Liaw, Tien-Sheng Chao, Evans Ching-Song Yang
Rok vydání:	2003
Předmět:	Reliability (semiconductor) Materials science business.industry Transconductance Low-power electronics Electrical engineering NAND gate Electric current business Quantum tunnelling Flash memory Voltage
Zdroj:	1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
DOI:	10.1109/vlsit.1999.799352
Popis:	A novel 3D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in a NOR array, which guarantees better tunnel oxide reliability, where previously bi-directional tunneling program/erase could only be performed in NAND arrays. Moreover, high read performance is achieved by more than 15% conduction current enhancement due to the 3D cell structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5a131a88e03184eff0586734e026c5dc https://doi.org/10.1109/vlsit.1999.799352 Zobrazit plný text záznamu