Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool
| Autor: | M. J. Powell, S. C. Deane, C. van Berkel |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Amorphous silicon
Quantitative Biology::Biomolecules Materials science Condensed matter physics Dangling bond Fermi energy Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Computer Science::Hardware Architecture Condensed Matter::Materials Science chemistry.chemical_compound Computer Science::Emerging Technologies chemistry Thin-film transistor Materials Chemistry Ceramics and Composites Density of states Field-effect transistor |
| Zdroj: | Journal of Non-Crystalline Solids. :1215-1220 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(05)80342-4 |
| Popis: | The threshold voltage shift in amorphous silicon thin film transistors at moderate applied bias is detemined by changes in the density of dangling bond states in the a-Si:H. Positive bias-stress creates dangling bond states at a low energy (D e states), in both oxide and nitride transistors. Negative bias-stress creates dangling bond states at higher energy (D h states) in oxide transistors, but mainly reduces the density of D e states in nitride transistors. These results are explained using a defect pool model for the dangling bond states. The difference for oxide and nitride transistors is due to a different zero bias Fermi energy position at the interface. For nitride transistors, charge trapping at higher bias, followed by thermal annealing leads to a new zero bias thermal equilibrium density of states. Transistor characteristics can be optimised in this way. |
| Databáze: | OpenAIRE |
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