High‐quality and thick InN films grown on 2‐inch sapphire substrate by molecular‐beam epitaxy

Autor:	Ke Xu, T. Hata, Yoshihiro Ishitani, Akihiko Yoshikawa, M. Yoshitani, Wataru Terashima, Naoki Hashimoto, B. Cao
Rok vydání:	2003
Předmět:	Materials science Quality (physics) Reflection spectroscopy business.industry Band gap Electron concentration Sapphire Sapphire substrate Optoelectronics Wafer business Molecular beam epitaxy
Zdroj:	physica status solidi (c). :2790-2793
ISSN:	1610-1634
DOI:	10.1002/pssc.200303269
Popis:	InN growth on 2-inch sapphire (0001) with thickness up to 5 μm was demonstrated by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). The surfaces of the 2-inch samples were mirror-like and atomic growth steps were observed in large areas. The room temperature Hall mobility crossing the 2-inch InN wafers ranged from 900 to 1100 cm2/V s, with electron concentration of the order of 1018/cm3. The optical bandgap of the InN layers with electron concentration of the order of 1018/cm3 was 0.70–0.74 eV measured by optical transmission/reflection spectroscopy. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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