Analysis of heavy-ion particles striking regions inside and between PIN photodetectors
| Autor: | Renato Giacomini, R. T. Buhler, A. L. Perinm, Carla Novo, M. A. G. Silveira |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
010308 nuclear & particles physics business.industry PIN diode Photodetector Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Radiation 021001 nanoscience & nanotechnology Chip 01 natural sciences Cathode law.invention Interference (communication) law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics 0210 nano-technology business Particle beam Diode |
| Zdroj: | 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). |
| Popis: | This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that are used to evaluate the radiation analysis in PIN diodes in dark condition for heavy-ion radiation effects. Particle beam radiation, present in hazard environments, may cause circuit malfunctions due to interference in the device response. These variables impact the PIN diode performance, which are important devices to sensor applications, including those in space and nuclear facilities environments. The results pointed out the magnitude of the peak in the cathode current of a diode while the chip is struck by a particle inside the device's area, as well as in the device's neighborhood. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|