| Autor: |
Fei Chen, John Chen, Bei Zhu, Guo-Ping Ru, Hongxiang Mo, Paolo Bonfanti, Hui-Zhen Wu, Dawei Gao, Hanming Wu, Yu-Long Jiang |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.. |
| DOI: |
10.1109/icsict.2004.1435048 |
| Popis: |
Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the influence of rapid thennal annealing process on the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. Two-step annealing process was found to improve the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. The results indicate that two-step annealing process would be preferred for NiSi or Ni(Si/sub 1-x/Ge/sub x/) formation on the ultra-shallow junction in the future CMOS technology nodes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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