Autor: |
Margarete Kops, Guido Mertens, Yuta Taniguchi, Alexander von Wezyk, Takahiro Shirai, Noritaka Ashizawa, Klaus Bergmann, Yusuke Teramoto, Kunihiko Kasama, Ralf Kops, Hironobu Yabuta, B Santos, Akihisa Nagano |
Rok vydání: |
2016 |
Předmět: |
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Zdroj: |
High-Brightness Sources and Light-Driven Interactions. |
DOI: |
10.1364/euvxray.2016.es4a.1 |
Popis: |
A compact high-brightness EUV source is needed for high-throughput actinic mask inspection in EUV lithography. Ushio is developing a light source utilizing LDP technology where rotating Sn-covered electrodes, trigger lasers and pulsed electrical discharge are employed to create an EUV-emitting plasma at as high repetition rate as 10 kHz. A unique mechanical debris-mitigation system was found to be able to stop neutral particles and reduce fast-ion flux. Clean-photon EUV radiance, of which wavelength is 13.5 nm and band width is 2 %, obtained after the debris-mitigation system was 145 W/mm2/sr. Sputter rate of Ru mirror sample was 2~5 nm/Gpulse whereas Sn deposition was found not to grow with time. Up to 5 days of non-interrupted operation was successfully demonstrated. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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