Sn-fueled high-brightness compact EUV light source

Autor: Margarete Kops, Guido Mertens, Yuta Taniguchi, Alexander von Wezyk, Takahiro Shirai, Noritaka Ashizawa, Klaus Bergmann, Yusuke Teramoto, Kunihiko Kasama, Ralf Kops, Hironobu Yabuta, B Santos, Akihisa Nagano
Rok vydání: 2016
Předmět:
Zdroj: High-Brightness Sources and Light-Driven Interactions.
DOI: 10.1364/euvxray.2016.es4a.1
Popis: A compact high-brightness EUV source is needed for high-throughput actinic mask inspection in EUV lithography. Ushio is developing a light source utilizing LDP technology where rotating Sn-covered electrodes, trigger lasers and pulsed electrical discharge are employed to create an EUV-emitting plasma at as high repetition rate as 10 kHz. A unique mechanical debris-mitigation system was found to be able to stop neutral particles and reduce fast-ion flux. Clean-photon EUV radiance, of which wavelength is 13.5 nm and band width is 2 %, obtained after the debris-mitigation system was 145 W/mm2/sr. Sputter rate of Ru mirror sample was 2~5 nm/Gpulse whereas Sn deposition was found not to grow with time. Up to 5 days of non-interrupted operation was successfully demonstrated.
Databáze: OpenAIRE