Carrier transport in stripe‐geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctions
| Autor: | H. W. Willemsen, F. R. Shepherd, K. D. Anderson, A. Zemel |
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| Rok vydání: | 1983 |
| Předmět: |
Materials science
business.industry General Physics and Astronomy Heterojunction Double heterostructure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Semiconductor laser theory Depletion region Condensed Matter::Superconductivity Optoelectronics Charge carrier business Current density Lasing threshold Diode |
| Zdroj: | Journal of Applied Physics. 54:1981-1987 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The current‐voltage characteristics of stripe‐geometry double heterostructure diode lasers and broad area heterojunctions of Ga1−xAlxAs prepared by liquid‐phase epitaxy have been extensively studied as a function of temperature and diode area to perimeter ratio. For stripe‐geometry lasers, current‐voltage measurements were made up to the lasing threshold (∼104 A/cm2). The carrier transport mechanisms in different ranges of current densities were identified and interpreted on the basis of existing models for p‐n junctions. It is found that 2‐kT current in combination with a tunneling current of the form I α exp(T/T0) exp(AV) where T0 and A are constants essentially independent of temperature, are the major contributions to the diode current at low forward bias. The 2‐kT current is most probably due to surface recombination occurring at the junction perimeter and the tunneling current is most probably related to defects generated in the diode depletion region during epitaxial growth and/or sample processing... |
| Databáze: | OpenAIRE |
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