Deep level profile studies in chromium radiotracer diffused MOCVD GaAs
| Autor: | Anthony R. Peaker, W.K. Ke, B. Tuck, M. Brozel, Bruce Hamilton, D. R. Wight |
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| Rok vydání: | 1985 |
| Předmět: |
Valence (chemistry)
Materials science Deep level Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Acceptor Electronic Optical and Magnetic Materials Chromium chemistry Electric field Materials Chemistry Metalorganic vapour phase epitaxy Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 28:611-615 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(85)90133-9 |
| Popis: | The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS profiles for the EL1 centre, but good agreement was obtained using an optically pumped method. A hole trap located at 0.34 eV above the valence, and thought to be associated with the 4+ charge state of Cr, matched the atomic Cr concentration to within a factor of two. It was found that for high temperature diffusions ( m 1000°C ) most of the Cr atoms act as deep acceptor centres. |
| Databáze: | OpenAIRE |
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