Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
| Autor: | I. A. Sokolov, M. V. Pavlenko, M. A. Sokolov, A. N. Alekseev, L. É. Velikovskiĭ, D. M. Krasovitskiĭ, A. P. Shkurko, S. B. Aleksandrov, S. I. Petrov, M. Yu. Pogorel’skiĭ, M. V. Stepanov, A. É. Byrnaz, A. G. Tkachenko, Yu. V. Pogorel’skiĭ, I. É. Velikovskiĭ, V. P. Chalyĭ |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Transistor chemistry.chemical_element Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science Ammonia chemistry.chemical_compound chemistry Saturation current law Sapphire Optoelectronics business Fermi gas Voltage |
| Zdroj: | Technical Physics Letters. 34:300-302 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced and ensured the growth of heterostructures with two-dimensional electron gas, which are suitable for the creation of field-effect transistors. The saturation current of prototype devices based on the heterostructures grown on silicon substrates are comparable with the analogous parameter of devices grown on sapphire and exhibits no decrease related to thermal scattering at high bias voltages. |
| Databáze: | OpenAIRE |
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