Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device
| Autor: | Jin Woo Park, Muhammad Atif Khan, Yoontae Lee, Sun Jin Yun, Gil-Ho Kim, Doo Hyeb Youn, Servin Rathi, Dongsuk Lim |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Orders of magnitude (temperature) business.industry Schottky barrier Transistor Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Rectification law Electric field Electrode Optoelectronics General Materials Science 0210 nano-technology business Quantum tunnelling Diode |
| Zdroj: | ACS Applied Materials & Interfaces. 9:26983-26989 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS2) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on–off ratio drops by 3 orders of magnitude due to the increase in “off” current for both single and few layer MoS2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 103 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS2 interface. Finally, finite elem... |
| Databáze: | OpenAIRE |
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