Autor: |
Kerri Cahoy, Garrett Schlenvogt, Randall Milanowski, Raichelle Aniceto, Slaven Moro |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS). |
DOI: |
10.1109/radecs.2017.8696239 |
Popis: |
Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 \times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses |
Databáze: |
OpenAIRE |
Externí odkaz: |
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