Proton Radiation Effects on Hamamatsu InGaAs PIN Photodiodes

Autor: Kerri Cahoy, Garrett Schlenvogt, Randall Milanowski, Raichelle Aniceto, Slaven Moro
Rok vydání: 2017
Předmět:
Zdroj: 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
DOI: 10.1109/radecs.2017.8696239
Popis: Hamamatsu InGaAs PIN photodiodes were exposed to 105 MeV protons to a fluence of $2.55 \times 10^{11}$ p/cm2. Radiation induced increase in dark current was observed that appeared stable following room temperature annealing. A preliminary TCAD model was developed for use in mixed-mode simulation analyses
Databáze: OpenAIRE