Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor
| Autor: | Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa, Mitsuaki Shimizu |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Analytical chemistry 02 engineering and technology 01 natural sciences Capacitance law.invention symbols.namesake law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Condensed matter physics business.industry Fermi level Time constant Wide-bandgap semiconductor 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitor Semiconductor symbols Equivalent circuit 0210 nano-technology business AND gate |
| Zdroj: | Microelectronic Engineering. 178:182-185 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2017.05.034 |
| Popis: | Frequency dispersion of capacitance-voltage (C-V) characteristics of a GaN metal-oxide-semiconductor (MOS) capacitor was systematically investigated. A high frequency C-V curve without including capacitance associated with interface traps and negligibly small C-V hysteresis gave us an accurate relationship between the surface Fermi level and the gate voltage in the C-V curve. We found that obvious frequency dispersion was observed even at a gate bias condition of 1V, which has very long electron capturing time compared with time corresponding to inverse of the measurement frequencies. Furthermore, calculation based on an equivalent circuit of the MOS capacitor including surface potential fluctuation (s) clarified that the frequency dispersion is owing to the large s. This indicates that consideration of the impact of s is quite important for accurate understanding of the C-V characteristics for wide-bandgap semiconductor. Display Omitted Accurate relationship between surface Fermi level and gate voltage was determined.The relationship enables to derive time constant for AC response of interface traps.The AC response was observed even at a gate bias with the very long time constant.We clarified the AC response is owing to large surface potential fluctuation.The large fluctuation could derive significant mislead of the interface quality. |
| Databáze: | OpenAIRE |
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