Delineation of pn junctions by scanning tunneling microscopy/ spectroscopy in air and ultrahigh vacuum
| Autor: | R. M. Silver, W. F. Tseng, J. A. Dagata |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Dopant Scanning tunneling spectroscopy Analytical chemistry Spin polarized scanning tunneling microscopy Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Surfaces Coatings and Films law.invention Condensed Matter::Materials Science law Condensed Matter::Superconductivity Scanning tunneling microscope p–n junction Spectroscopy Quantum tunnelling Surface states |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1705-1708 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.579755 |
| Popis: | Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward‐ and reverse‐bias imaging and position‐dependent tunneling spectroscopy makes it possible to delineate the metallurgical junction location of abrupt asymmetric n+p and symmetric n+p+ junctions. The experimental results are shown to be consistent with simulations based on the metal–insulator–semiconductor band‐bending model when surface states and bulk transport through the pn junction are properly taken into account in the calculations. |
| Databáze: | OpenAIRE |
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