Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)
| Autor: | Shangyu Yang, Siqi Zhao, Junhong Chen, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Yang Zhang, Xingfang Liu, Guosheng Sun, Yiping Zeng |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Crystal Growth. 612:127058 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2022.127058 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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