Growth and morphology of SnPc films on the S-GaAs(001) surface: a combined XPS, AFM and NEXAFS study
| Autor: | I.T. McGovern, Javier Méndez, A. R. Vearey-Roberts, S. O’Brien, I Cerrillo, H. J. Steiner, Stephen D. Evans, Gregory Cabailh, D. A. Evans, Justin W. Wells |
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| Rok vydání: | 2004 |
| Předmět: |
X-ray spectroscopy
Extended X-ray absorption fine structure Absorption spectroscopy Chemistry Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Electron spectroscopy XANES Surfaces Coatings and Films Organic semiconductor Crystallography X-ray photoelectron spectroscopy Spectroscopy |
| Zdroj: | Applied Surface Science. 234:131-137 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2004.05.068 |
| Popis: | The morphology and molecular ordering of the organic semiconductor tin phthalocyanine (SnPc) on the sulphur-terminated GaAs(0 0 1) surface have been monitored by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and near-edge X-ray absorption fine structure (NEXAFS). XPS measurements using synchrotron radiation reveal weak interfacial bonding between the organic molecules and the inorganic semiconductor substrate. The attenuation of XPS core-level peak intensities with increasing organic film thickness suggests a Stranski-Krastanov growth mode, and an island morphology is confirmed by AFM. Although the SnPc clusters do not have specific crystalline facets, NEXAFS spectra show an angle dependence consistent with a molecular orientation close to the surface plane, within the clusters. |
| Databáze: | OpenAIRE |
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