Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors
| Autor: | T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon business.industry Transistor chemistry.chemical_element Semiconductor device Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention ComputingMilieux_GENERAL Crystal Metal Reliability (semiconductor) chemistry Hardware_GENERAL law visual_art Soldering Hardware_INTEGRATEDCIRCUITS Materials Chemistry visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Russian Microelectronics. 49:385-388 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallization of the reverse side of the crystal are considered and the optimal technology is selected. The parameters of the reliability of the crystal’s connection to the transistor’s case are checked. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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