Electrical breakdown in ZnS:Mn films grown by rf-magnetron sputtering

Autor:	V. A. Mukhachev, P. E. Troyan, A. A. Zhigal'skii
Rok vydání:	1993
Předmět:	Materials science Aluminum electrode business.industry Polarity (physics) Inhomogeneous field Doping Electrical breakdown General Physics and Astronomy Optoelectronics Field strength Surface finish Sputter deposition business
Zdroj:	Russian Physics Journal. 36:221-223
ISSN:	1573-9228 1064-8887
Popis:	We have studied the electrical breakdown field strength Ebr of ZnS films doped with Mn(ZnS:Mn), produced by rf magnetron sputtering, as a function of film thickness d in the system Al-ZnS:Mn-Al. Electron-microscope studies have shown that breakdown is initiated under inhomogeneous field conditions imposed both by the roughness of the aluminum electrode and by the polycrystallinity of the ZnS:Mn film. An observed increase in Ebr as d is reduced below 0.7 µm, with no polarity effect in breakdown under dc field conditions, is explained in terms of an electron-thermal breakdown model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::599db18987c94b58175498b1a5dd6815 https://doi.org/10.1007/bf00559623 Zobrazit plný text záznamu Full text from SpringerLink