Electrical breakdown in ZnS:Mn films grown by rf-magnetron sputtering
Autor: | V. A. Mukhachev, P. E. Troyan, A. A. Zhigal'skii |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Russian Physics Journal. 36:221-223 |
ISSN: | 1573-9228 1064-8887 |
Popis: | We have studied the electrical breakdown field strength Ebr of ZnS films doped with Mn(ZnS:Mn), produced by rf magnetron sputtering, as a function of film thickness d in the system Al-ZnS:Mn-Al. Electron-microscope studies have shown that breakdown is initiated under inhomogeneous field conditions imposed both by the roughness of the aluminum electrode and by the polycrystallinity of the ZnS:Mn film. An observed increase in Ebr as d is reduced below 0.7 µm, with no polarity effect in breakdown under dc field conditions, is explained in terms of an electron-thermal breakdown model. |
Databáze: | OpenAIRE |
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