5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Autor:	M. Mitchell, John D. Cressler, John Papapolymerou, J.P. Comeau, M.A. Morton
Rok vydání:	2008
Předmět:	Engineering business.industry Absolute phase X band Topology (electrical circuits) BiCMOS Topology Silicon-germanium chemistry.chemical_compound CMOS chemistry Electronic engineering Insertion loss Electrical and Electronic Engineering business Phase shift module
Zdroj:	IET Microwaves, Antennas & Propagation. 2:19-22
ISSN:	1751-8733 1751-8725
Popis:	A hybrid pi/t bit passive topology is presented to enable a significant reduction in the die area for a high-pass/low-pass phase shifter is presented. A hybrid-topology 5 bit digital X-band phase shifter was designed, fabricated and tested using a 200 GHz, 0.13 mum SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology. Size and performance characteristics are presented as a contrast to an all-pi phase shifter recently presented by Comeau et al. using the same SiGe BiCMOS technology and design goals. With similar bit passive performance to the all-pi design, the hybrid shifter allows for a total shifter die-area reduction of 50.5%. The absolute phase error of the shifter was less than plusmn13 from 8 to 12 GHz, with an average insertion loss of -20 dB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::599d8d1f83aa372e13a962696f0810f0 https://doi.org/10.1049/iet-map:20070077 Zobrazit plný text záznamu