Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor
| Autor: | Mayumi B. Takeyama, Eiji Aoyagi, Masaru Sato, Hideaki Machida, Atsushi Noya, Hiroshi Sudoh, Shun Ito |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Vanadium nitride General Engineering Analytical chemistry General Physics and Astronomy Vanadium chemistry.chemical_element Nanocrystalline material Atomic layer deposition chemistry.chemical_compound chemistry Transmission electron microscopy Impurity Electrical resistivity and conductivity Texture (crystalline) |
| Zdroj: | Japanese Journal of Applied Physics. 50:05EA06 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | Thin vanadium nitride (VN x ) films were grown by atomic layer deposition using tetrakis(diethylamido)vanadium as a precursor and NH3 as a reactant. A growth rate of 0.1 nm/cycle without incubation time is obtained. Transmission electron microscopy reveals that a nanocrystalline texture in random orientation is characteristic of the VN x film, which is favorable as an extremely thin barrier application. A low carbon impurity level (∼6 at.%) is achieved owing to acceleration of the transamination between the V(NR2)4 precursor and NH3. The lowest resistivity of 120 µΩ cm is successfully achieved for the VN x film prepared under optimized conditions. |
| Databáze: | OpenAIRE |
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