Characterization of Widely Used Bipolar Transistors in Wide Temperature Range Before and After Ionizing Radiation Impact

Autor:	Aleksandr E. Koziukov, Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Rodin, Nikita S. Glukhov
Rok vydání:	2018
Předmět:	Materials science 010308 nuclear & particles physics business.industry 0103 physical sciences Bipolar junction transistor Optoelectronics Atmospheric temperature range business 01 natural sciences Characterization (materials science) Ionizing radiation
Zdroj:	2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
Popis:	The electryical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5990f51d760c538dbd5d9f062948de20 https://doi.org/10.1109/nsrec.2018.8584306 Zobrazit plný text záznamu