Study of a 4 Micron Oxide Etching Using C5F8/O2/Ar Plasma

Autor:	Nicolas Hotellier, Linda Depoyan, F. Judong, Pierre Bouillon, Martial Baudrier
Rok vydání:	2006
Předmět:	chemistry.chemical_compound Materials science chemistry Etching (microfabrication) business.industry Oxide Optoelectronics Plasma Reactive-ion etching business
Zdroj:	ECS Transactions. 2:13-21
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2204813
Popis:	While most of the SiO2 etch processes for microelectronics focus on very small dimensions, some specific embedded applications require thick oxide etching. For the purpose of a thick damascene copper layer, the morphological properties of a C5F8 (octafluorocyclopentene)/O2/Ar chemistry is investigated on a MERIE reactor by means of a Design of Experiment (DOE). Some experiments present 2 distinct etch states, inducing sloping profile on top of the trench and straighter profile on bottom of the trench. Polymer deposition on the photoresist sides and on the oxide walls is faster than polymer consumption by bombardment. A very simple model is issued for RIE-lag adjustment between small and large areas through the mean of residence time, thus allowing a fine depth tuning for both trenches and pads patterning.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::59900c645cd8a6f16d983f95752ce8df https://doi.org/10.1149/1.2204813 Zobrazit plný text záznamu