Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled silicon

Autor:	C. G. Kirkpatrick, B. G. Streetman, J. R. Noonan
Rok vydání:	1974
Předmět:	Materials science Photoluminescence Silicon Doping Analytical chemistry chemistry.chemical_element General Chemistry Condensed Matter Physics chemistry Impurity Aluminium Materials Chemistry Irradiation Atomic physics Gallium Luminescence
Zdroj:	Solid State Communications. 15:1055-1059
ISSN:	0038-1098
DOI:	10.1016/0038-1098(74)90530-4
Popis:	The commonly observed 0.970 eV peak in the low-temperature photoluminescence from electron-irradiated Si is strongly suppressed in Ga-doped material. Another important peak at 0.790 eV is inhibited by Al doping. The present results are in conflict with previous identification of the defect responsible for the 0.790 eV peak. New luminescent bands observed only in samples with Al and Ga doping are reported.
Databáze:	OpenAIRE
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