IN SITU HALL MEASUREMENTS OF MACROSCOPIC ELECTRICAL PROPERTIES OF CHROMIUM-COVERED Si(111) SURFACES
| Autor: | D. L. Goroshko, V. A. Ivanov, N. G. Galkin, A. S. Gouralnik, A. V. Konchenko |
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| Rok vydání: | 1999 |
| Předmět: |
In situ
Electron mobility Materials science Condensed matter physics Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Conductivity Condensed Matter Physics Epitaxy Surfaces Coatings and Films Chromium chemistry Materials Chemistry Layer (electronics) Sheet resistance |
| Zdroj: | Surface Review and Letters. :7-12 |
| ISSN: | 1793-6667 0218-625X |
| DOI: | 10.1142/s0218625x99000032 |
| Popis: | The first in situ Hall measurements of the ordered chromium surface phases on Si(111) substrate and CrSi(111) epitaxial films after their formation are presented. Formation of Si (111)-(1× 1)- Cr (0.1 nm Cr) and Si(111)-[([Formula: see text])/30°]-Cr (0.3 nm Cr) surface phases results in an increase in the sheet resistivity of Si(111)-Cr surface phase samples. The conductivities along the surface phases at these chromium thicknesses are very low. The conductivity decrease is caused by a decrease in the electron mobility in the surface phase layers. Formation of an epitaxial CrSi(111) layer with averaged Hall parameters (hole mobility of 440 cm 2· V -1· s -1, sheet resistivity of 2.2·104 Ω-1 and sheet hole concentration of 0.65·1012 cm -2) has been observed at 1.5–1.8 nm of chromium thickness. |
| Databáze: | OpenAIRE |
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