A manufacturable 0.35 μm 150 GHz f/sub T/ SiGe:C bipolar RF technology

Autor:	B. Hasler, T. Huttner, Markus Schwerd, H. Heineder, Andrea Mitchell, M. Seck, S. Drexl, M. Schrenk, Rudolf Lachner, T. Bottner, V. Kubrak, Heinrich Körner
Rok vydání:	2003
Předmět:	Materials science business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY World wide Silicon-germanium law.invention chemistry.chemical_compound Broad spectrum Rf technology chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Radio frequency Resistor business Lithography
Zdroj:	2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..
DOI:	10.1109/smic.2003.1196656
Popis:	Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 /spl mu/m bipolar SiGe:C technology offering balanced transistor parameter sets with more than 150 GHz f/sub T/ and 180 GHz f/sub max/ as well as further integrated active and passive devices to serve a broad spectrum of applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::597e7119adc3d9072d6d20a7796dbaaa https://doi.org/10.1109/smic.2003.1196656 Zobrazit plný text záznamu