Optical properties of iron-passivated nanoporous silicon

Autor: D. N. Goryachev, O. Yu. Shevchenko, L. V. Belyakov, Olga M. Sreseli
Rok vydání: 2010
Předmět:
Zdroj: Semiconductors. 44:642-646
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782610050167
Popis: The intensity of photoluminescence from nanoporous silicon layers produced by electrochemical etching in an aqueous-alcoholic HF solution in the presence of iron ions increases and properties of these layers are stabilized. The optimal FeCl3 concentration in the etching solution has been found. The interaction of iron ions with the silicon surface and the nature and possible products of reactions involving oxygen and hydrogen have been studied.
Databáze: OpenAIRE