Behaviour of optical transitions in GaAs/AlAs with highly Be δ-doped MQWs
| Autor: | Matthew J. Steer, Jurgis Kundrotas, Matthew P. Halsall, B. Sherliker, Paul Harrison, Aurimas Čerškus, Gintaras Valušis, Agne Johannessen, Steponas Ašmontas |
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| Rok vydání: | 2005 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Photoluminescence Condensed matter physics Condensed Matter::Other Doping General Physics and Astronomy Liquid nitrogen Gaas alas Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Acceptor Mott transition Condensed Matter::Materials Science Recombination Quantum well |
| Zdroj: | Lithuanian Journal of Physics. 45:201-206 |
| ISSN: | 1648-8504 |
| Popis: | We present the photoluminescence properties of highly Be �-doped GaAs/AlAs multiple quantum wells at liquid nitrogen and room temperatures. Possible mechanisms of carrier recombination focusing on peculiarities of excitonic and free-carriers– acceptor photoluminescence are discussed. It is estimated that for Be �-doped GaAs/AlAs quantum wells (LW = 5 nm) the Mott transition should occur at acceptor concentration NBe some greater than 5 · 10 12 cm 2 . |
| Databáze: | OpenAIRE |
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