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Thin film transistors (TFTs) with indium–zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage ( V th ) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The V th , the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm 2 /V s, 1.3 V/decade, and 8.2 × 10 6 , respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure. |
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