SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry
| Autor: | C. Pickering, P. Evrard, J.-L Stehlé, R.T. Carline |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Materials science Superlattice Metals and Alloys Analytical chemistry High resolution Surfaces and Interfaces Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake chemistry Material quality Materials Chemistry symbols Spectroscopic ellipsometry Raman spectroscopy Inorganic compound Layer (electronics) |
| Zdroj: | Thin Solid Films. 222:73-77 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(92)90041-9 |
| Popis: | High resolution Raman spectroscopy and spectroscopic ellipsometry have been used to characterize SiGe superlattices and single strained epitaxial layers. The results are interpreted to give information on material quality, composition, layer thicknesses and state of strain. The complementary nature of the techniques is discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|