A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Autor:	Shouchang Tsao, H. Waki, Ken Oowada, K. Hatakeyama, Y. Nozawa, Masanobu Shirakawa, M. Kojima, Y. Kameda, Ken Takeuchi, Makoto Iwai, Koji Hosono, S. Tanaka, Teruhiko Kamei, Jeffrey W. Lutze, Naoya Tokiwa, H. Otake, Yoshihiko Shindo, Shih-Chung Lee, Yohji Watanabe, M. Higashitani, Jia-Yi Fu, Hitoshi Shiga, Shigeo Ohshima, G. Hemink, Susumu Fujimura, N. Hayashida, Shinji Sato, A. Cernea, Jun Wan, Kiyofumi Sakurai, Mehrdad Mofidi, K. Kanazawa, Masayuki Ichige, Yan Li, Takuya Futatsuyama
Rok vydání:	2006
Předmět:	Scheme (programming language) Hardware_MEMORYSTRUCTURES Computer science Nand flash memory business.industry CMOS Memory cell business Throughput (business) computer Computer hardware Computer memory Block (data storage) computer.programming_language Electronic circuit
Zdroj:	ISSCC
Popis:	Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::596bfbd85fd37d29d66104d3b0e53369 https://doi.org/10.1109/isscc.2006.1696083 Zobrazit plný text záznamu