41lanthanum‐based dielectric films analyzed by spectroscopic ellipsometry, X‐ray reflectometry and X‐ray photoelectron spectroscopy
| Autor: | M. C. Hugon, M. Gaillet, V. Edon, Christophe Cardinaud, C. Eypert, Olivier Durand |
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| Rok vydání: | 2008 |
| Předmět: |
010302 applied physics
Materials science Absorption spectroscopy Annealing (metallurgy) Analytical chemistry 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences X-ray reflectivity X-ray photoelectron spectroscopy Ellipsometry 0103 physical sciences Thin film 0210 nano-technology Reflectometry |
| Zdroj: | physica status solidi c. 5:1206-1209 |
| ISSN: | 1610-1642 1862-6351 |
| Popis: | Composition and interfacial properties of LaAlO3/Si thick (50 nm) and thin (7 nm) films were accessed by Far Ultra-Violet Spectroscopic Ellipsometry (FUV-SE), X-Ray Reflectometry (XRR) and X-Ray Photoelectron Spectroscopy (XPS). FUV-SE correlated to XRR analysis shows that LaAlO3/Si thick and thin films should be modelled by three-layer stacks using Tauc-Lorentz dispersion law. Annealing effects of LaAlO3/Si thin films such as increase of interfacial layer thickness and intermixing between high-κ oxide and Si were demonstrated by FUV-SE, and confirmed by XRR and XPS measurements. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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